MRF6S18100NR1【PDF 1/21 页】MOSFET RF N-CH 28V 100W TO2704

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MRF6S18100NR1 MRF6S18100NBR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequen-

cies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier

amplifier applications.

GSM Application

Typical GSM Performance: VDD

=28Volts,IDQ

= 900 mA,

Pout

= 100 Watts, f = 1990 MHz

Power Gain — 14.5 dB

Drain Efficiency — 49%

GSM EDGE Application

Typical GSM EDGE Performance: VDD

=28Volts,IDQ

= 700 mA,

Pout

= 40 Watts Avg., Full Frequency Band (1805--1880 MHz or

1930--1990 MHz)

Power Gain — 15 dB

Drain Efficiency — 35%

Spectral Regrowth @ 400 kHz Offset = --63 dBc

Spectral Regrowth @ 600 kHz Offset = --76 dBc

EVM — 2% rms

Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW

Output Power

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 VDD

Operation

Integrated ESD Protection

Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +68

Vdc

Gate--Source Voltage

VGS

--0.5, +12

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(1,2)

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 CW

Case Temperature 77°C, 40 CW

RθJC

0.51

0.62

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

LIFETIME BU

LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12

Document Number: MRF6S18100N

Rev. 2, 12/2008

Freescale Semiconductor

Technical Data

MRF6S18100NR1

MRF6S18100NBR1

1805--1990 MHz, 100 W, 28 V

GSM/GSM EDGE

LATERAL N--CHANNEL

RF POWER MOSFETs

CASE 1486--03, STYLE 1

T O -- 2 7 0 W B -- 4

MRF6S18100NR1

CASE 1484--04, STYLE 1

T O -- 2 7 2 W B -- 4

MRF6S18100NBR1

Freescale Semiconductor, Inc., 2005--2006, 2008.

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